Negative differential resistance effect and current rectification in WS2 nanotubes: A density functional theory study

Article Type

Research Article

Publication Title

Journal of Physics and Chemistry of Solids

Abstract

Electronic properties of (n,0) zigzag tungsten disulfide WS2 nanotubes and transport properties of (7,0) zigzag nanotube heterojunction are investigated by utilizing non-equilibrium Green's function formalism (NEGF). The results reveal that inclusion of the spin-orbit (SO) coupling significantly reduces the value of the band gap about 15.52\%. Additionally, strong negative differential resistances take place in voltage regions between −0.2 and −0.4 V as well as between −0.5 and −0.6 V. Moreover, temperature dependent transport properties are elaborately investigated in this work. The results show that, as the temperature increases to 600 K the stronger negative differential resistance occurs in both positive and negative bias voltages. Finally, a reasonably large degree of rectification ratio can be established. Our analysis can provide a comprehensive perspective on the NDR effect and current rectification in WS2 nanotubes and can be used as a beneficial guide for future designing of novel logical and nanoelectronic and spintronic devices.

DOI

https://10.1016/j.jpcs.2023.111369

Publication Date

8-1-2023

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